Company news

RADROCK has launched the industry's most advanced low-voltage and high-power 5G Phase2N multi-mode and multi-band PA module

2024.05.15

RADROCK has launched the industry's most advanced low-voltage and high-power 5G Phase2N multi-mode and multi-band PA module

1. Background

As a well-known RF device supplier in the industry, Ruishi Chuangxin actively lays out and expands RF front-end products with PA as the cornerstone by virtue of its strong R&D strength and front-end design experience, closely follows the general trend of RF front-end modularization market, and adheres to the concept of continuous innovation and experimentation from technology. Since its establishment in 2017, Sharpstone has launched a series of high-performance 5G solutions, this time in response to the needs of 5G mobile phones to further sink, Sharpstone actively practices and launches cost-effective low-voltage 5G Phase2N MMMB PA modules to meet the value needs of low-end 5G mobile phones, tablets, IOT IoT modules and other communication consumer products, to provide customers with more comprehensive solutions, but also to further accelerate the localization of RF modules to replace the process.

Driven by consumer demand and market dynamics, the demand for 5G mobile phones has gradually increased, from 550 million units in 2021 to 700 million units in 2023, with a growth rate of more than 27%, and the global penetration rate of 5G mobile phones will be as high as 80% in 2024. With the massive conversion of 4G mobile phones to 5G mobile phones and the implementation of the domestic SA (Standalone Network) Only network access license policy, which further promotes the emergence of 5G mobile phones with high cost performance, efficient performance and moderate price, the optimization of RF front-end solutions is crucial.
According to statistics, Phase5N/Phase2N is the main RF solution for the current mid-to-low-end mobile phone Sub-3G band. With the mature application of the Phase5N/Phase2N solution, combined with the higher demands of mobile phone terminal manufacturers for cost and performance, "low-voltage application" will be one of the feasible solutions to further reduce costs through the system power supply solution, that is, to achieve RF front-end chips that can work at 3.4V through differentiated innovative design, thereby getting rid of the dependence of RF front-end chips on step-up power management chips in high-power mode, thereby greatly reducing the overall cost of materials. However, most of the Phase2N products on the market today still have some problems:
1.Under the condition of 3.4V power supply voltage, the power requirement of NR PC3 cannot be met in some frequency bands (generally 29dBm).
2.In order to pursue low cost, some Phase2N products sacrifice stability and ruggedness.
3.Some Phase2N products can achieve good LTE power efficiency, but the deterioration of 5G NR power efficiency is serious.
To this end, Ruishi Chuangxin has launched 3.4v high-power Phase2N products through differentiated PA architecture and innovative design to achieve the optimal design of the overall solution.
The Phase2N product launched this time adopts a two-layer substrate design, and realizes the complete grounding of the grounding pad layer through the ultimate design optimization; At the same time, Ruishi actively promotes the mass production and introduction of domestic advanced supply chain, and adopts domestic 12-inch advanced technology for CMOS and SOI chips in Sub 3G's PA module to further optimize product performance and cost.

2. Performance summary of RR88643-31NR 3.4V Phase2N NR PC3

The RR88643-31NR adopts the high-performance PA architecture pioneered by Ruishi, which overcomes the challenges of high-band(HB) PA in the industry that have been difficult to balance efficiency, linearity and power for many years. The biggest design difficulty of HB NR PA is to achieve high efficiency and high power under the premise of satisfying the linearity of 100MHz/80MHz large modulation bandwidth. In the Phase5N product line, PA manufacturers usually use the combined PA method to achieve the above requirements, such as Pushpull/Doherty/Balance/Wilkinson architecture, but the combined PA architecture often results in a larger chip area, a higher number of substrate layers, and more matching devices, which ultimately greatly increases the overall cost of the product.
In terms of performance RR88643-31NR achieves industry-leading power and efficiency in all frequency bands, and meets the power requirements of PC3 in all 5G NR bands at 3.4V.

3. Schematic diagram of standalone (SA) power supply architecture

With the end of the announcement of the independent networking (SA) policy of the Ministry of Industry and Information Technology, the time point of SA Only network access license will be more clear, and the simple antenna architecture will further reduce the insertion loss of the RF path in the SA application scenario, and the effective linear power (MPR0) of 30dBm can still be output under the 3.4V voltage of the RR88643-31NR n41 100M wideband, and the conduction power of n41 PC2 can still be guaranteed if the insertion loss of the n41 front-end path can be guaranteed in the system design process.

4. Schematic diagram of non-standalone (NSA) power architecture

In the NSA application scenario, in order to realize the multi-antenna architecture design and multi-CA combination, the insertion loss of the RF path will inevitably increase, thereby affecting the conduction power, and the RR88643-31NR LB/MB/HB NR band can still achieve the full power output of PC3 29dBm at VCC 3.4v, which effectively makes up for the insufficient conduction power caused by the increase of insertion loss.

5. Performance summary of RR98081-12 3.4V n77 1T2R

In order to build a complete ecosystem of low-voltage applications, Ruishi Chuangxin has also launched a high-performance 3.4v n77 1T2T L-PAMiF, which can achieve n78 full-band PC2@3.4v, n77 PC3@3.4v, RR98081-12 adopts an innovative low-voltage differential amplifier architecture, and achieves high linear power and efficiency at 3.4v voltage. Low-voltage stability and other indicators have been tested and verified by mobile phone terminal manufacturers.

#About RADROCK

Founded in 2017, Ruishi Chuangxin is headquartered in Shenzhen, with branches in Shanghai, Chongqing, Chengdu and Xi'an. Since its establishment, relying on the industry's cutting-edge RF chip technology, with innovative thinking and design concepts, Ruishi Chuangxin has focused on the R&D and sales of high-performance and high value-added mobile phone RF front-end products, and has successively launched 4G Phase2, 5G Phase5N, n41 L-PAMiF, n77/n79 L-PAMiF, WiFi PA, NB-IOT PA and other high-performance RF products to meet the needs of domestic mobile phone terminal manufacturers in 4G, There is a huge demand for RF front-end products in the 5G and IoT markets.